ds30368 rev. 3 - 2 1 of 3 BSS123W www.diodes.com diodes incorporated BSS123W n-channel enhancement mode field effect transistor features low gate threshold voltage low input capacitance fast switching speed low input/output leakage high drain-source voltage rating also available in lead free version maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol value units drain-source voltage v dss 100 v drain-gate voltage r gs 20k v dgr 100 v gate-source voltage continuous v gss 20 v drain current (note 1) continuous pulsed i d i dm 170 680 ma total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage temperature range t j ,t stg -55 to +150 c case: sot-323, molded plastic plastic material - ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 3 terminal connections: see diagram marking: k23 (see page 3) mechanical data a m j l e d b c h k g g s d t c u d o r p w e n sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm notes: 1. device mounted on fr-4 pc board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. source gate d ra i n
ds30368 rev. 3 - 2 2 of 3 BSS123W www.diodes.com characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 100 v v gs = 0v, i d = 250
a zero gate voltage drain current i dss 1.0 10 a na v ds = 100v, v gs = 0v v ds = 20v, v gs = 0v gate-body leakage, forward i gssf 50 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) 0.8 1.4 2.0 v v ds =v gs , i d = 1ma static drain-source on-resistance r ds (on) 6.0 10 v gs = 10v, i d = 0.17a v gs = 4.5v, i d = 0.17a forward transconductance g fs 80 370 ms v ds = 10v, i d = 0.17a, f = 1.0khz drain-source diode forward voltage v sd 0.84 1.3 v v gs = 0v, i s = 0.34a dynamic characteristics input capacitance c iss 29 60 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 10 15 pf reverse transfer capacitance c rss 26pf switching characteristics turn-on rise time t r 8ns v dd = 30v, i d = 0.28a, r gen = 50 , v gs = 10v turn-off fall time t f 16 ns turn-on delay time t d(on) 8ns turn-off delay time t d(off) 13 ns electrical characteristics @ t a = 25 c unless otherwise specified notes: 2. short duration test pulse used to minimize self-heating effect. t c u d o r p w e n 0.8 1.2 1.6 0.1 0.2 r , normalized ds(on) drain-source on-resistance i , drain-source current (a) d fig. 2 on-resistance variation with gate voltage and drain-source current v=4v gs 2.0 2 .4 0.30.4 0.50.6 v=3v gs v = 5, 6, 7, 10v gs 0 0.2 0 .7 0 1 3 4 5 i , drain-source current (a) d v , drain-source voltage (v) ds fi g . 1 on-re g ion characteristics v = 4v gs 2 0.6 0.5 0.1 0.3 0.4 v = 3v gs v = 10, 7, 6, 5v gs
ds30368 rev. 3 - 2 3 of 3 BSS123W www.diodes.com 0 5 0 0 5 15 20 25 c, capacitance (pf) v , drain-source voltage (v) ds fi g . 5 t y pical capacitance 10 40 30 10 20 ciss coss crss f = 1.0mhz 0.4 0.8 1.2 -50 0 75 100 125 150 r normalized on-resistance ds(on), t , junction temperature (oc) j fi g . 4 on-resistance variation with temperature 1.6 1.8 2 . 2 -25 25 50 0.6 1 1.4 2 v = 10v gs i = 170m d 0.7 0.8 0.9 -50 0 75 100 125 150 v normalized threshold voltage gs(th), t , junction temperature (oc) j fi g . 3 gate threshold variation with temperature 1 1.1 1.2 -25 25 50 t c u d o r p w e n date code key k23 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k23 ym marking information notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: BSS123W-7-f. device packaging shipping BSS123W-7 sot-323 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd 0 50 100 100 200 p , power dissipation (mw) d t , ambient temperature (c) a fi g . 6 power deratin g curve, total packa g e 150 200 2 5 0 0 year 2002 2003 2004 2005 2006 2007 2008 2009 code npr s tuvw
|
